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Semiconductor
IRF230, IRF231, IRF232, IRF233
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17412.
October 1997
Features
* 8.0A and 9.0A, 150V and 200V * rDS(ON) = 0.4 and 0.6 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
D
Ordering Information
PART NUMBER IRF230 IRF231 IRF232 IRF233 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF230 IRF231 IRF232 IRF233
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1997
File Number
1568.2
1
IRF230, IRF231, IRF232, IRF233
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF230 200 200 9.0 6.0 36 20 75 0.6 150 -55 to 150 300 260 IRF231 150 150 9.0 6.0 36 20 75 0.6 150 -55 to 150 300 260 IRF232 200 200 8.0 5.0 32 20 75 0.6 150 -55 to 150 300 260 IRF233 150 150 8.0 5.0 32 20 75 0.6 150 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to TJ = 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V, (Figure 10) 200 150 VGS(TH) VGS = VDS, ID = 250A IGSS IDSS VGS = 20V VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125oC 2.0 4.0 100 25 250 V V V nA A A MIN TYP MAX UNITS
Drain to Source Breakdown Voltage IRF230, IRF232 IRF231, IRF233 Gate Threshold Voltage Gate to Source Leakage Current Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) IRF230, IRF231 IRF232, IRF233 Drain to Source On Resistance (Note 2) IRF230, IRF231 IRF232, IRF233 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 9.0 8.0 A A
rDS(ON)
ID = 5A, VGS = 10V, (Figure 8, 9) 0.25 0.4 4.8 19 10 9 0.4 0.6 30 50 50 40 30 S ns ns ns ns nC nC nC
gfs td(ON) tr td(OFF) tf
VDS 50V, ID = 5A, (Figure 12) VDD = 90V, ID 5A,RG = 15, RL =18 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature
3.0 -
Qg(TOT) VGS = 10V, ID = 12A, VDS = 0.8V x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Qgs Temperature Qgd
2
IRF230, IRF231, IRF232, IRF233
Electrical Specifications
PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
MIN -
TYP 600 250 80 5.0
MAX -
UNITS pF pF pF nH
Internal Source Inductance
LS
-
12.5
-
nH
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RJC RJA Free Air Operation
-
-
1.6 30
oC/W oC/W
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 9.0 36
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 9.0A, VGS = 0V, (Figure 13) TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/s TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/s
-
450 3.0
2.0 -
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 20V, starting TJ = 25oC, L = 3.37mH, RG = 50, peak IAS = 9A. See Figures 15, 16.
3
IRF230, IRF231, IRF232, IRF233 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
10
ID, DRAIN CURRENT (A)
8 IRF230, IRF231 6 IRF232, IRF233
0.8 0.6 0.4 0.2 0
4
2
0 0 50 100 150 TC, CASE TEMPERATURE (oC)
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
ZJC, TRANSIENT THERMAL IMPEDANCE
2 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 t1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ= PDM x ZJC + TC 10-4 10-3 10-2 0.1 1 10 t2 PDM
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
100 IRF230,1 ID, DRAIN CURRENT (A) IRF232, 3 10 IRF230,1 IRF232, 3
TC = 25oC TJ = MAX RATED SINGLE PULSE 10s 100s 1ms ID, DRAIN CURRENT (A)
20
10V 8V
80s PULSE TEST 7V
16
12 VGS = 6V 8 5V
1
OPERATION IN THIS AREA IS LIMITED BY rDS(ON)
10ms 100ms DC IRF231, 3 IRF230, 2
4
0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000
0
4V 0 20 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) 100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
4
IRF230, IRF231, IRF232, IRF233 Typical Performance Curves
10 80s PULSE TEST 8 10V 9V 8V 7V 6V VGS = 5.0V 4 8
Unless Otherwise Specified (Continued)
10
VDS > ID(ON) x rDS(ON)MAX 80s PULSE TEST
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
6
6 125oC 25oC -55oC
4
2 4.0V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5
2
0
0
1
2
3
4
5
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
0.8 80s PULSE TEST rDS(ON), DRAIN TO SOURCE ON RESISTANCE () NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 10V
2.2
ID = 3.5A VGS = 10V
1.8
0.6
1.4
1.0
VGS = 20V 0.2
0.6
0
0
10
20 ID, DRAIN CURRENT (A)
30
40
0.2 -60
-40
-20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
ID = 250A
2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1.05
C, CAPACITANCE (pF)
1.15
1600
1200
0.95
800
CISS
0.85
400 CRSS
COSS
0.75 -40
0
40
80
120
160
0
1
TJ, JUNCTION TEMPERATURE (oC)
10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
IRF230, IRF231, IRF232, IRF233 Typical Performance Curves
10 ISD, SOURCE TO DRAIN CURRENT (A) 80s PULSE TEST gfs, TRANSCONDUCTANCE (S) 8 TJ = -55oC 6 TJ = 25oC TJ = 125oC
Unless Otherwise Specified (Continued)
102
10 TJ = 150oC TJ = 25oC
4
2
0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10
1 0 1 2 3 VSD, SOURCE TO DRAIN VOLTAGE (V) 4
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 9A VDS = 160V VDS = 100V VDS = 40V
15
10
5
0 0 8 16 24 32 Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
6
IRF230, IRF231, IRF232, IRF233 Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT 0.3F
FIGURE 18. RESISTIVE SWITCHING WAVEFORM
CURRENT REGULATOR
Qg(TOT) Qgd Qgs
12V BATTERY
0.2F
VGS
50k
D VDS G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
7

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